Fig. 7
From: First-Principles insights into group-V impurities and their impact on germanium detector performance
(a) Formation energy (\(\Delta \textrm{E}_{\textrm{f}}\)) of defect complexes of the type XVX (X = N, P, As, Sb) as a function of the electron chemical potential (\(\textrm{E}_{\textrm{F}}\)). (b) Corresponding charge transition levels (CTLs) for the defect complexes shown in (a). In both panels, the dotted black lines represent results for PVP complex obtained using full HSE-relaxed structures. The shaded regions denote the valence band (VB) and conduction band (CB).
