Fig. 1
From: Electronic structure calculations on gallium-vacancy defects in Si1-xGex
Schematic representation of the lowest binding energy (in eV) GaV defects and their nearest neighbour atoms in Si1 − xGex (x = 0.125, 0.25, 0.375, 0.5, 0.625, 0.75, 0.875) with the respective binding energies.
