Fig. 1
(a) Schematic cross-sectional of the fabricated SA TG coplanar IGZO TFTs. (b) Transfer characteristics of the SA TG coplanar IGZO TFTs with various Ls (W/L = 10 µm/3, 12, 20 µm) measured in the linear region (VD = 0.1 V) at RT. (c) VTH, µFE, and SS values extracted from the SA TG coplanar IGZO TFTs with various Ls (W/L = 10 µm/3, 12, 20 µm), where each value represents the average of five devices, and the vertical error bars indicate ± 1 standard deviation.
