Table 1 Comparison of C-ATMOS and SGDC-ATMOS characteristics.

From: A split gate double-channel asymmetric SiC trench MOSFET for improved gate oxide reliability and dynamic characteristics

 

C-ATMOS

SGDC-ATMOS (h/µm)

Unit

0.2

0.8

1.4

1.8

Ron, sp

2.02

1.65

1.77

1.91

2.32

mΩ·cm2

BV

1239

1290

1285

1284

1281

V

Emox

2.32

1.88

1.82

1.59

1.55

MV/cm

BFOM a

0.76

1.01

0.93

0.86

0.71

GW/cm2

Cgd

9.5

0.33

0.25

0.15

0.11

pF/cm2

Qgd

111

66

56

48

41

nC/cm2

Qgd×Ron, sp

224

109

99

92

95

mΩ·nC

  1. aBFOM is the value of BV2/Ron, sp.
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