Table 1 Characteristics of various layers that are contained in SCAPS-1D30.
From: Performance enhancement in CZTSSe solar cells via BaSi₂ back surface field integration
Parameters | BaSi2 | ZnO: i | CZTSSe | ZnO: Al | CdS |
|---|---|---|---|---|---|
Dielectric permittivity (relative) | 12.5 | 9 | 13.6 | 9 | 10 |
Band gap (eV) | 1.3 | 3.3 | 1.097 | 3.3 | 2.4 |
Electron affinity (eV) | 4.2 | 4.4 | 4.1 | 4.4 | 4.2 |
Thickness (µm) | 0.3 | 0.1 | 1.8 | 0.2 | 0.05 |
Effective conduction band density (cm− 3) | 1019 | 2.2 × 1018 | 2.2 × 1018 | 2.2 × 1018 | 2.2 × 1018 |
Doping concentration of donors (cm− 3) | 0 | 1018 | 0 | 1018 | 1017 |
Doping concentration of acceptors (cm− 3) | 5 × 1018 | 1018 | 1015 | 0 | 0 |
Effective valence band density (cm− 3) | 4.13 × 1019 | 1.8 × 1019 | 1.8 × 1019 | 1.8 × 1019 | 1.8 × 1019 |
