Fig. 5
Top-gated transfer characteristics of the Ge1−xSnx (a) and Si1−x−yGeySnx (b) JNT in dependence on a constant back-gate potential VBG.
Fig. 5 | Scientific Reports
Top-gated transfer characteristics of the Ge1−xSnx (a) and Si1−x−yGeySnx (b) JNT in dependence on a constant back-gate potential VBG.
