Table 1 Etch gases and conditions for each layer.

From: Self-aligned imprint lithography process for fabricating indium-gallium- zinc-oxide thin film transistor arrays

Layer

Material

Etch Gas

Etch Condition

Etch Time (s)

Etch Rate

(nm/s)

Etch mask

Resin

Ar/O2

400 W, 30/5 sccm

60

-

S/D

Al (100 nm)

BCl3 + Cl2

60 W, 20 + 5 sccm

70

1.43

Cr (15 nm)

Cl2

Dry, 120 W, 30 sccm

Wet (ETCR-400)

210

−

0.07

−

Active

IGZO (30 nm)

BCl3

180 W, 25 sccm

135

0.22

Dielectrics

SiNx (100 nm)

CF4

80 W, 30 sccm

25

4.0

SiO2 (150 nm)

70 W, 20 sccm

70

2.14

Gate

Al (150 nm)

BCl3 + Cl2

30 W, 20 + 5 sccm

270

0.56

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