Fig. 1
(a) Critical temperature \(T_{\textrm{c}}\) of the \(\textrm{Nb}{}_{3}\textrm{Sn}\) films as a function of the target surface current density, for samples deposited on sapphire at \({630}~^{\circ }\textrm{C}\) temperature, and \(2 \times 10^{-2}\) mbar and \(3 \times 10^{-3}\) mbar argon pressure. Error bars on the \(T_{\textrm{c}}\) values correspond to the width of the superconducting transition curve extracted via the 10% - 90% method. (b) Deposition rate as a function of the surface current density applied to the sputtering target, for \(\textrm{Nb}{}_{3}\textrm{Sn}\) samples deposited on sapphire at \({600}~^{\circ }\textrm{C}\) to \({650}~^{\circ }\textrm{C}\) deposition temperature, and \(2 \times 10^{-2}\) mbar and \(3 \times 10^{-3}\) mbar argon pressure. The linear fit is only applied to the low-current-density data range. The values indicated above the data points indicate the Sn content expressed in At%.
