Fig. 2
(a) Dependence of \(T_{\textrm{c}}\) on the deposition temperature for \(\textrm{Nb}{}_{3}\textrm{Sn}\) samples deposited on sapphire. The full markers represent the data taken for samples annealed at the same temperature at which they were deposited and for different time lengths (24 h, 5 h, 2 h). The empty markers represent data taken for samples which were not annealed. (b) Dependence of \(T_{\textrm{c}}\) on the deposition temperature for \(\textrm{Nb}{}_{3}\textrm{Sn}\) samples deposited on copper and NbBL substrates, with the thickness of the NbBL ranging from 1 \(\upmu\)m to 40 \(\upmu\)m. Connecting lines have been added to guide the reader’s eye. These samples did not undergo the annealing step. Note the difference in temperature range for the abscissas in the two plots. For both figures, the error bars on the \(T_{\textrm{c}}\) values correspond to the width of the superconducting transition curve extracted via the 10% - 90% method (for the error bars \(< \pm\)0.5 K) and to the spread of the \(T_{\textrm{c}}\) values when more than one sample was included for the data point (for the error bars > ±0.5 K).
