Table 4 Deposition conditions used for the preparation of ZnO samples: ECWR power, MF power, working pressure, flow rates of working gases ar and O2, deposition time, film thickness and corresponding deposition rate.
From: Impact of electron cyclotron wave resonance plasma on defect reduction in ZnO thin films
Sample | PECWR (W) | PMF (W) | p (Pa) | QAr (sccm) | QO2 (sccm) | Dep. time (min) | Thickness (nm) | Dep. rate (nm/min) |
|---|---|---|---|---|---|---|---|---|
#1 | 0 | 300 | 0.3 | 10 | 10 | 55 | 3800 | 69 |
#2 | 100 | 300 | 0.3 | 10 | 10 | 25 | 2100 | 84 |
#3 | 200 | 300 | 0.3 | 10 | 10 | 25 | 3100 | 124 |
#4 | 300 | 300 | 0.3 | 10 | 10 | 25 | 3700 | 148 |
#5 | 380 | 300 | 0.3 | 10 | 10 | 25 | 2400 | 96 |
