Fig. 6

The influence of different angles and temperatures on thermal resistance of SiC grain boundaries under symmetric inclined grain boundaries (a) 3 C-SiC; (b) 4 H-SiC; (c) 3C4H; (d) 4H3C.

The influence of different angles and temperatures on thermal resistance of SiC grain boundaries under symmetric inclined grain boundaries (a) 3 C-SiC; (b) 4 H-SiC; (c) 3C4H; (d) 4H3C.