Table 2 Comparing the current simulation with previous research.
Device architecture | JSC (mA.cm− 2) | VOC(V) | FF (%) | PCE (%) | References |
|---|---|---|---|---|---|
Ke et al. | 24.28 | 0.4287 | 63.72 | 6.63 | |
Singh et al. | 25.97 | 1.203 | 87.79 | 27.43 | |
Tara et al. | 28.12 | 1.0859 | 84.96 | 25.94 | |
Mattaparthi et al. | 28.35 | 1.2419 | 89.64 | 31.57 | |
Vishnuwaran et al. | 29.40 | 1.04 | 85.24 | 24.45 | |
Rehman et al. | 30.67 | 0.938 | 87.10 | 24.87 | |
Alqurashi et al. | 28.28 | 1.11 | 84.02 | 26.46 | |
Kaur et al. | 25.89 | 1.25 | 88.90 | 28.93 | |
Ritu et al. | 29.88 | 0.97 | 84.39 | 24.54 | |
Almufarij et al. | 30.79 | 1.143 | 86.56 | 30.45 | |
Mishra et al. | 29.316 | 2.05 | 53.37 | 32.13 | |
Mercy et al. | 32.26 | 1.18 | 84.94 | 32.58 | |
Rahman et al. | 34.17 | 1.14 | 34.17 | 32.74 | |
Ali et al. | 34.3025 | 1.2559 | 89.88 | 38.72 | |
Device with (TiO2 as ETL) | 30.836 | 1.10 | 79.71 | 27.04 | Present work |
Device with (SnS2 as ETL) | 30.836 | 1.123 | 79.83 | 27.64 | Present work |
Device with (Sn(S0.92Se0.08)2 as ETL) | 30.836 | 1.2762 | 81.87 | 32.22 | Present work |