Table 1 Main parameters adopted in the simulations.

From: Modeling the capacitance–voltage characteristics of AlGaN-based UV-C LEDs

Parameter

Value

Unit

\({N}_{A,GaN\_0}\)

\(0.9\times {10}^{19}\)

\({cm}^{-3}\)

\({N}_{A,GaN}\)

\(5\times {10}^{17}\)

\({cm}^{-3}\)

\({N}_{A,SL}\)

\(2\times {10}^{19}\)

\({cm}^{-3}\)

\({N}_{A,SLSP}\)

\(2\times {10}^{19}\)

\({cm}^{-3}\)

\({N}_{D,QB\text{1,2}}\)

\(3\times {10}^{18}\)

\({cm}^{-3}\)

\({N}_{D,FB}\)

\(6\times {10}^{18}\)

\({cm}^{-3}\)

\({N}_{D,Buffer}\)

\(4\times {10}^{18}\)

\({cm}^{-3}\)

\({N}_{T,QW2/QB2}\)

\(1\times {10}^{12}\)

\({cm}^{-2}\)

\({N}_{T,QW3/LB}\)

\(1\times {10}^{12}\)

\({cm}^{-2}\)

\({m}_{t,FB}\)

0.3

 

Radiative coefficient

\(5\times {10}^{-11}\)

\({cm}^{3}{s}^{-1}\)

Auger-Meitner coefficient

\(5\times {10}^{-30}\)

\({cm}^{6}{s}^{-1}\)

Energy level of Mg in GaN

\({E}_{V}+150\)

\(meV\)

Energy level of Mg in AlGaN

\({E}_{V}+250\)

\(meV\)

Energy level of Si in AlGaN

\({E}_{C}-24\)

\(meV\)