Fig. 3
From: Optimizing a dynamic infrared emitter by tailoring titanium carbide MXene surface chemistry
Electric field and thermal profile of the W-doped VO2/SiO2/Ti3C2Tx MXene emitter for different surface terminations. Electric field distribution of (a): W-doped VO2/SiO2/Ti3C2, (b): W-doped VO2/SiO2/Ti3C2F2, (c): W-doped VO2/SiO2/Ti3C2O2, (d): W-doped VO2/SiO2/Ti3C2(OH)2. Thermal profile of (e): W-doped VO2/SiO2/Ti3C2, (f): W-doped VO2/SiO2/Ti3C2F2, (g): W-doped VO2/SiO2/Ti3C2O2, (h): W-doped VO2/SiO2/Ti3C2(OH)2.
