Fig. 1 | Scientific Reports

Fig. 1

From: Wafer-scale formation of MoS2 with controlled thickness and high uniformity via conversion of MoOx using H2S sulfurization and subsequent crystallization

Fig. 1The alternative text for this image may have been generated using AI.

(a) Wafer-scale growth of MoS2 films using an annealing system based on the three-step conversion (3SC) method. (b) Raman and (c) Photoluminescence (PL) spectra of monolayer MoS2 synthesized by the 3SC method. (d) Full width at half maximum (FWHM) of the PL peak of the monolayer MoS2 synthesized by the 3SC method as a function of the composition ratio x in the initial MoOx film, deposited using electron beam evaporation (EB), ion-assisted deposition (IA), ion plating (IP), sputtering (SP), and atomic layered deposition (ALD) methods.

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