Fig. 2 | Scientific Reports

Fig. 2

From: Wafer-scale formation of MoS2 with controlled thickness and high uniformity via conversion of MoOx using H2S sulfurization and subsequent crystallization

Fig. 2The alternative text for this image may have been generated using AI.

Cross-sectional transmission electron microscopy (TEM) images of MoS2 films synthesized from initial MoOx films with (a) x = 2.89 and (b) x = 2.98, and from (c) a Mo film after H2S annealing at 600 °C followed by Ar annealing at 1100 °C. (c) Delamination is observed in (c).

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