Fig. 3 | Scientific Reports

Fig. 3

From: Wafer-scale formation of MoS2 with controlled thickness and high uniformity via conversion of MoOx using H2S sulfurization and subsequent crystallization

Fig. 3The alternative text for this image may have been generated using AI.

Raman spectra of MoOx films with x = 2.8 after H2S annealing at 300 °C under (a) 100 Pa and (b) 50 kPa for 10 min, followed by Ar annealing at 1100 °C for 10 min. XPS spectra of (c) the as-deposited MoOx films with x = 2.8, and (d) after H2S annealing at 300 °C under 100 Pa and 50 kPa for 10 min.

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