Fig. 4 | Scientific Reports

Fig. 4

From: Wafer-scale formation of MoS2 with controlled thickness and high uniformity via conversion of MoOx using H2S sulfurization and subsequent crystallization

Fig. 4The alternative text for this image may have been generated using AI.

Raman intensity ratio of LO/E2g as a function of the H2S annealing temperature (a) without and (b) with the following Ar annealing at 1100 °C for 10 min. MoOx films with x = 2.89 were used, with H2S annealing conducted under 100 Pa and 50 kPa for 10 min as a common condition. Cross-sectional TEM images of MoOx films with x = 2.89 after H2S annealing at 600 °C under 50 kPa for 10 min (c) without and (d) with subsequent Ar annealing at 1100 °C for 10 min.

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