Fig. 6 | Scientific Reports

Fig. 6

From: Wafer-scale formation of MoS2 with controlled thickness and high uniformity via conversion of MoOx using H2S sulfurization and subsequent crystallization

Fig. 6The alternative text for this image may have been generated using AI.

(a) Monolayer MoS2 film on a 4-inch Si/SiO2 wafer synthesized by the 3SC method. (b) PL mapping at the exciton peak centered at 1.87 eV. Cross-sectional TEM images of (c) monolayer MoS2 and (d) bilayer MoS2 films on the 4-inch Si/SiO2 wafer using the 3SC method. (e) Variation of Raman peak difference between the E2g and A1g modes at 50 points for the monolayer and bilayer MoS2 films. (f) Raman peak difference between the E2g and A1g modes as a function of MoS2 layer number synthesized by the 3SC method, compared to single-crystal MoS2 data37.

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