Table 3 Performance comparison of CNTFET-based SRAM cells (dielectric constant = 3.9).

This work

6T

32 nm

D_cnt = 1.0179 nm

7.668 ps

5.163 ps

0.5349 nW

350.12 mV

D_cnt = 1.9558 nm

5.351 ps

4.982 ps

185.1 nW

8T

D_cnt = 1.0179 nm

5.76 ps

5.36 ps

1.522 nW

325.76 mV

D_cnt = 1.9558 nm

5.033 ps

5.05 ps

186.92 nW

10T

D_cnt = 1.0179 nm

5.624 ps

7.873 ps

1.971 nW

360.85 mV

D_cnt = 1.9558 nm

4.94 ps

6.693 ps

188.12 nW

10T Modified

D_cnt = 1.0179 nm

5.502 ps

4.813 ps

2.915 nW

462.21 mV

D_cnt = 1.9558 nm

4.798 ps

4.161 ps

188.84 nW

⁶⁴

6T

32 nm

6.3 ps

7.25 ps

234.34 nW

198 mV

8T

32 nm

6.6 ps

7.16 ps

448.24 nW

254 mV

⁵⁵

6T

32 nm

3.06 ps

29.23 ps

0.185 nW

290.8 mV

8T

2.46 ps

8.96 ps

0.11 nW

327.4 mV

⁵⁴

6T

32 nm

–

5.9 ns

–

RNM = 202 mV

WNM= 340 mV

7T

–

3.6 ns

–

RNM=223 mV

WNM = 360 mV

8T

–

6.5 ns

–

RNM=397 mV

WNM=379 mV

9T

–

7.6 ns

–

RNM = 410 mV

WNM = 330 mV

10T

–

8.0 ns

–

RNM =432 mV

WNM = 475 Mv

⁶⁵

10T

32 nm

5.93 ps

9.45 ps

6.10 μW

–

¹⁷

10T

32 nm

1 ns

6 ns

4.9 μW

356 mV

⁶⁶

10T

32 nm

13 ps

6 ns

3.53 μW

328 mV

⁴¹

8T

32 nm

7.22 ps

4.72 ps

0.011 nW

350 mV