Fig. 3: Electronic transport and magnetic characterization of FGT films. | npj 2D Materials and Applications

Fig. 3: Electronic transport and magnetic characterization of FGT films.

From: Unraveling the electronic structure and magnetic transition evolution across monolayer, bilayer, and multilayer ferromagnetic Fe3GeTe2

Fig. 3

a Anomalous Hall resistance (RAH) as a function of applied magnetic field for 1–10 QL at 5 K. The magnetic field is applied out-of-plane to the substrate, parallel to the c-axis of FGT. All layer numbers display a ferromagnetic response with varying coercivity, remanent resistance, and saturation resistances. Coercive field values decrease from 1 QL sample and stabilize as thickness increases. b TC as a function of the number of layers. Arrott plot analysis is employed to extrapolate TC by fitting anomalous Hall data, allowing for a more precise determination of TC, which is identified to rise concurrently with sample thickness. Unfilled circles correspond to measurements taken on different samples that had identical thicknesses. From 1–10 QL TC rises by roughly 100 K. c Antisymmetrized Rxy data, incorporating contributions from both conventional and anomalous Hall responses emphasizing distinctions in linear contributions of the high-field region, marked by the dashed line.

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