Fig. 4: Comparison of temperature-dependent PL emission in the heterostructure. | npj 2D Materials and Applications

Fig. 4: Comparison of temperature-dependent PL emission in the heterostructure.

From: Efficient energy transfer and photoluminescence enhancement in 2D MoS2/bulk InSe van der Waals heterostructures

Fig. 4

a Integrated intensity for the P-band, AInSe, and all defect emission as a function of temperature with and without MoS2 (solid and hollow, respectively). Inset: Intensity ratio as a function of temperature of the AInSe intensity for MoS2/InSe compared to bare InSe. b Peak positions and c FWHM as a function of temperature for InSe emission with and without MoS2 (solid and hollow, respectively). d Energy level diagram of the excitonic states and transitions in the MoS2/InSe heterostructure. Colored arrows depict radiative decay pathways and hollow arrows depict non-radiative transition pathways.

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