Fig. 4: Assessment of uniqueness of TCAD calibration.
From: Interface trap states induced underestimation of Schottky barrier height in metal-MX2 junctions
a Comparison of temperature dependent experimental transfer characteristics with simulated curves for varying SBH values. b Simulated SS variation with temperature for a uniform Dit distribution throughout the MoS2 bandgap. c Simulated SS variation with temperature for a calibrated Dit distribution of Fig. 3c. The Dit distribution is scaled by a constant factor (DitFact), such that Dit=Ditfact * (Dit profile in Fig. 3d). SS is extracted in the IDS range of 1e-4 –1e-3 µA/µm. Indicated are also the extracted experimental values corresponding to Fig. 2c.
