Fig. 1: Schematic illustration of the hypothesis for memristor devices based on monolayer h-BN, where we proposed that large variations in the current on/off ratio and switching voltage are influenced by the electrode-BN distance d. | npj 2D Materials and Applications

Fig. 1: Schematic illustration of the hypothesis for memristor devices based on monolayer h-BN, where we proposed that large variations in the current on/off ratio and switching voltage are influenced by the electrode-BN distance d.

From: Origin of large variations of current on/off ratio and switching voltage in atomically thin memristors: an exascale ab initio transport study

Fig. 1: Schematic illustration of the hypothesis for memristor devices based on monolayer h-BN, where we proposed that large variations in the current on/off ratio and switching voltage are influenced by the electrode-BN distance d.

a For devices with shorter interface distances, they have lower current on/off ratios and lower switching voltages. b For devices with larger interface distances, they show higher current on/off ratios and higher switching voltages. Note that the interface (electrode-to-electrode) distance is 2 d.

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