Fig. 3: Electronic transport simulations at relatively large electrode-BN distances. | npj 2D Materials and Applications

Fig. 3: Electronic transport simulations at relatively large electrode-BN distances.

From: Origin of large variations of current on/off ratio and switching voltage in atomically thin memristors: an exascale ab initio transport study

Fig. 3: Electronic transport simulations at relatively large electrode-BN distances.

Atomic structures of the Au/h-BN/Au device under different resistance states: a high-resistance state (HRS), b medium resistance state (MRS), and c low-resistance state (LRS). Calculated I–V curves under different states at varying electrode-BN distances: d 5.91 Å, e 6.91 Å, and f 7.50 Å. Here, the switching behavior at the SET/RESET voltage is not simulated. The device area in one unit cell is 2.62 nm2.

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