Fig. 4: Device parameters as a function of the electrode-BN distance.
a Calculated resistances of different states as a function of the electrode-BN distance for the Au/h-BN/Au device. Note that at shorter distances (<5 Å) the MRS is the same as the LRS (thus their data points are overlapped), while at larger distances (>5 Å) the MRS is no longer equivalent to the LRS. b Calculated ON and OFF currents near zero voltage (0.1 V) as a function of the electrode-BN distance. The OFF current corresponds to the HRS, while the ON current corresponds to the LRS. The device area in one unit cell is 2.62 nm2. Calculated OFF (i.e., quantum tunneling) current density is shown in Fig. S1 in Supplementary Information. c The corresponding current on/off ratio as a function of the electrode-BN distance. Gray line is a fitting curve based on the formula of y = A × eB×d. The on/off ratio is basically defined between the LRS and HRS at any given distance. The Y axis is in the log scale in (a–c). Note that the interface (electrode-to-electrode) distance is twice the electrode-BN distance. d Calculated energy barrier of an Au atom dissociated from the Au electrode to adsorbing on the B vacancy site of the h-BN surface as a function of the electrode-BN distance.
