Fig. 2: Temporal photoresponse of SnS and SnS/MXene devices under strain and light variation. | npj 2D Materials and Applications

Fig. 2: Temporal photoresponse of SnS and SnS/MXene devices under strain and light variation.

From: MXenes as bipolar transport layer on the performance of SnS-based piezophototronic photodetector

Fig. 2

a SnS unstrain and strain. b SnS/Ti3C2Tx unstrain and strain. c SnS/Mo2TiC2Tx unstrain and strain. Graphs showing the temporal response when subjected to varying light intensity. d SnS unstrain and strain. e SnS/Ti3C2Tx unstrain and strain. f SnS/Mo2TiC2Tx unstrain and strain. g–i Temporal response when subjected to constant light intensity 0.17 mW/cm2 and increasing strains of 0%, 5%, 7% and 10% for the devices SnS, SnS/Ti3C2Tx, and SnS/Mo2TiC2Tx, respectively.

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