Table. 1 Growth parameters for GaSe and Ga2Se3
From: MOCVD growth of covalent and 2D GaxSey: a phase validation and characterization
Temperature in °C | Partial pressure ratio | Gallium partial pressure in mbar | Growth time in min | Gallium precursor | Substrate |
|---|---|---|---|---|---|
450 | 48.9 | 66.2 × 10−6 | 120 | TTBGa | Al2O3 |
146.8 | 65.8 × 10−6 | 120 | TTBGa | Al2O3 | |
440.4 | 65.0 × 10−6 | 120 | TTBGa | Al2O3 | |
1321.1 | 62.7 × 10−6 | 120 | TTBGa | Al2O3 | |
2636.7 | 59.5 × 10−6 | 120 | TTBGa | Al2O3 | |
500 | 45 | 66.2 × 10−6 | 120 | TTBGa | Al2O3 |
48.9 | 66.2 × 10−6 | 120 | TTBGa | Al2O3 | |
146.8 | 65.8 × 10−6 | 120 | TTBGa | Al2O3 | |
440.4 | 64.8 × 10−6 | 120 | TTBGa | Al2O3, GaP/Si | |
550 | 2.7 | 3.5 × 10−3 | 3 | TEGa | Al2O3 |
8.3 | 3.5 × 10−3 | 3 | TEGa | Al2O3 | |
26.1 | 66.2 × 10−6 | 120 | TTBGa | Al2O3 | |
48.9 | 66.2 × 10−6 | 120 | TTBGa | Al2O3 | |
440.4 | 65.0 × 10−6 | 120 | TTBGa | Al2O3 | |
600 | 2.7 | 3.5 × 10−3 | 3, 30 | TEGa | Al2O3, GaP/Si |
8.3 | 3.5 × 10−3 | 10 | TEGa | GaP/Si | |
25 | 3.5 × 10−3 | 10 | TEGa | GaP/Si | |
146.8 | 66.2 × 10−6 | 120 | TTBGa | GaP/Si | |
440.4 | 66.2 × 10−6 | 120 | TTBGa | GaP/Si |
