Fig. 1: ARPES measurements on bulk CrSBr indicating partial conduction band occupation.
From: Intrinsic defects as a source of n-type conductivity in CrSBr
a ARPES intensity map of bulk CrSBr at room temperature measured along high symmetry points. Above −0.85 eV, the acquisition time is increased 25-fold and the contrast is increased tenfold. The corresponding energy distribution curve (EDC), shown on the right, displays a weak spectral feature above the valence band maximum (VBM), highlighted in the inset (intensity multiplied by 100 for clarity). The grey dotted line indicates the linear fit used to extrapolate the VBM position. b Momentum map integrated over the energy range –1.6 eV to –1.3 eV, corresponding to the energy window of the conduction band–like feature. The white dotted line marks the boundary of the first Brillouin zone, and the grey solid line marks the path displayed in (a).
