Fig. 1: 3D Visualization of CBM and VBM fluctuations.
From: Impact of doping and channel inhomogeneities on the stability of industrially fabricated WS2 FETs
3D isometric visualization of conduction band minimum (CBM, blue) and valence band maximum (VBM, red) surfaces in a 2D semiconductor, showing spatial inhomogeneities modeled as narrow Gaussian potential fluctuations.
