Fig. 3: Photoluminescence variation with WS2 channel area.
From: Impact of doping and channel inhomogeneities on the stability of industrially fabricated WS2 FETs
Photoluminescence spectra collected at the center of three WS2 FETs with different channel areas. As the channel area decreases, the WS2 emission becomes broader and shifts to lower energies due to the enhanced trion contribution, indicative of larger electron concentration and higher n-type doping.
