Fig. 5: Electrical-optical correlation in WS2 FETs.
From: Impact of doping and channel inhomogeneities on the stability of industrially fabricated WS2 FETs
a ID-VBG curves measured from 120 devices with 15 different channel sizes using an adaptive single sweep from ~ − 3 V to ~ 5-10 V. b Representative EKV model fitting for four devices. c Correlation between Vt,n and the PL signal from WS2 (energy position and FWHM). As the threshold voltage decreases (i.e., n-type doping increases), the PL peak broadens and shifts to lower energies, consistent with a higher electron concentration in the channel.
