Fig. 6: BTI degradation in WS2 FETs.
From: Impact of doping and channel inhomogeneities on the stability of industrially fabricated WS2 FETs
a ID-VBG curves measured during the stress phase (\({V}_{{\rm{BG}},{\rm{str}}}=25\,{\rm{V}}\)) and subsequent recovery phase (VBG,rel = 0 V) for two devices with different channel areas. b Extracted ΔNot plotted as a function of \(| {V}_{{\rm{BG,str}}}| /{\rm{EOT}}\) at \({t}_{{\rm{str}}}=1\,{\rm{ks}}\) for both NBTI and PBTI stress conditions. c Experimental negative bias-induced ΔVt,n as a function of the initial threshold voltage Vt,n,0. Devices with higher n-type doping (i.e., smaller channel area) exhibit more pronounced degradation.
