Fig. 8: Impact of non-uniform doping on BTI in ambipolar 2D FETs.
From: Impact of doping and channel inhomogeneities on the stability of industrially fabricated WS2 FETs
a Schematic illustration of the ambipolar transfer characteristics of an as-fabricated WS2 FET with a non-uniform doping profile along the channel width. The channel center, exhibiting higher n-type doping, controls the n-branch, while the channel edges, exhibiting lower n-type doping, control the p-branch. b Schematic illustration of the degraded transfer characteristics of the same device after negative bias stress. A larger shift of the n-branch relative to the p-branch arises due to the increasing density of active traps with higher n-type doping levels.
