Fig. 9: Workflow for FET network modeling.
From: Impact of doping and channel inhomogeneities on the stability of industrially fabricated WS2 FETs
Workflow for constructing the 150 × 60 FET network model. The PL FWHM map of the large-area WS2 FET is converted into a spatial Vt,n map using an exponential function derived from single-point PL FWHM vs. Vt,n measurements. This Vt,n distribution serves as input to the network model, together with an additional exponential relation describing ΔVt,n as a function of the initial Vt,n,0, which is required to reproduce the asymmetric degradation resulting from non-uniform charge trapping.
