Table 1 Rise time variation

From: Mid-IR probing unveils vanadium doping-induced unsaturation of defect states in monolayer MoS2

 

Probe energy

Pump, EA = 1.85 eV

Pump, EB = 2 eV

Rise time V-MoS2

0.31 eV

0.11 ± 0.001 ps

0.09 ± 0.001 ps

0.62 eV

0.2 ± 0.001 ps

0.2 ± 0.001 ps

Rise time MoS2

0.31 eV

0.11 ± 0.002 ps

0.09 ± 0.001 ps

0.62 eV

0.2 ± 0.002 ps

0.2 ± 0.001 ps

  1. The variation of rise time for different pump energies shows that there is no change in the rise time at 0.62 eV probe. This rise time is also independent of the doping (MoS2 or V-MoS2), indicating that it is not influenced by defect states.
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