Extended Data Fig. 7: Electrical stability of the MoS₂ FETs with the atomic-layer Y-doping contact technology.

a, Transfer characteristics of the dual-gate MoS₂ FET with L_CH= 20 nm measured at different temperatures. The black curve of the dual-gate MoS₂ FET at V_DS= 0.7 V is the first measurement at the temperature of 293 K (initial curve). The red curve of the dual-gate MoS₂ FET at V_DS= 0.7 V is the second measurement at a high temperature of 400 K. The blue curve of the dual-gate MoS₂ FET at V_DS= 0.7 V is the third measurement at the temperature of 293 K (after the high temperature of 400 K measurement). b, Transfer characteristics of a dual-gate tri-layer MoS₂ FET at L_CH= 10 nm with top-gate stack encapsulation in ambient conditions over 10 weeks (70 days). c, The extracted on-current density (I_D) values of a dual-gate tri-layer MoS₂ FET at L_CH= 10 nm with top-gate stack encapsulation, with V_DS= 0.7 V and V_GS= 1 V, in ambient conditions over 10 weeks (70 days). d, The extracted SS of a dual-gate tri-layer MoS₂ FET at L_CH= 10 nm with top-gate stack encapsulation in ambient conditions over 10 weeks (70 days). e, The extracted R_total of a dual-gate tri-layer MoS₂ FET at L_CH= 10 nm with top-gate stack encapsulation in ambient conditions over 10 weeks (70 days). There is a slight degradation of the on-current and total resistance which is due to the slight shift of the threshold voltage rather than the contact degradation; meanwhile, SS remains approximately constant.