Extended Data Fig. 10: Self-heating effect. | Nature Electronics

Extended Data Fig. 10: Self-heating effect.

From: Yttrium-doping-induced metallization of molybdenum disulfide for ohmic contacts in two-dimensional transistors

Extended Data Fig. 10: Self-heating effect.The alternative text for this image may have been generated using AI.

a, Thermal conductivity comparison of conventional MoS2 FET with single-back-gate (air and SiO2/SiNx on each side) and our MoS2 FET with ultra-thin HfO2 and dual-gate configuration. b, The output characteristics of a tri-layer MoS2 FET with dual-gate configuration. From top to bottom, VGS= 1 V to 0.3 V with 0.1 V steps. The color solid lines and hollow points are the results of the D.C. and pulse I-V measurements, respectively.

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