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Memristive circuits based on multilayer hexagonal boron nitride for millimetre-wave radiofrequency applications

Nature Electronics volume 7, pages 557–566 (2024)Cite this article

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Abstract

Radiofrequency switches that drive or block high-frequency electromagnetic signals—typically, a few to tens of gigahertz—are essential components in modern communication devices. However, demand for higher data transmission rates requires radiofrequency switches capable of operating at frequencies beyond 100 GHz, which is challenging for current technologies. Here we report ambipolar memristive radiofrequency switches that are based on multilayer hexagonal boron nitride and can operate at frequencies up to 260 GHz. The ambipolar behaviour, which could help reduce peripheral hardware requirements, is due to a Joule-effect-assisted reset. We show switching in 21 devices with low-resistance states averaging 294 Ω and endurances of 2,000 cycles. With further biasing optimization, we reduce the resistance to 9.3 ± 3.7 Ω over more than 475 cycles, and achieve an insertion loss of 0.9 dB at 120 GHz. We also build a series–shunt device configuration with an isolation of 35 dB at 120 GHz.

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Fig. 1: Physical and d.c. characterization of Au–hBN–Au devices.
Fig. 2: Enhanced LRS performance for RF applications by pulsed write–verify protocol.
Fig. 3: mmWave performance of Au–multilayer hBN–Au switches.

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Data availability

The minimum set of data needed to evaluate the conclusions in this work is available via Zenodo at https://doi.org/10.5281/zenodo.11181165 (ref. 49). Additional related data supporting the findings in this study are available from the corresponding author upon reasonable request.

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Acknowledgements

M.L. acknowledges support from the generous Baseline funding programme and the Opportunity Fund Project 2023 under PID URF/1/5578-01-01 of King Abdullah University of Science and Technology. D.A. acknowledges the Cockrell Family Regents Chair Endowment. D.P. acknowledges support from the Science Foundation Ireland (SFI) under grant no. 20/RP/8334. J.V. and P.d.P. acknowledge the support by the Spanish Secretaría de Estado de Investigación, Desarrollo e Innovación under grant no. PID2021-127203OB-I00. M.L. acknowledges the platform Web Of Talents (https://weboftalents.com) for support on the recruitment of talented students and postdocs.

Author information

Authors and Affiliations

  1. Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia

    Sebastian Pazos, Yaqing Shen, Wenwen Zheng, Yue Yuan, Osamah Alharbi, Yue Ping & Mario Lanza

  2. Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia

    Haoran Zhang & Atif Shamim

  3. Department of Telecommunications and Systems Engineering, Universitat Autonoma de Barcelona, Cerdanyola del Valles, Spain

    Jordi Verdú, Eloi Guerrero, Lluís Acosta & Pedro de Paco

  4. Tyndall National Institute, Cork, Ireland

    Andrés Fontana & Dimitra Psychogiou

  5. School of Engineering, University College Cork, Cork, Ireland

    Dimitra Psychogiou

  6. Microelectronics Research Center, The University of Texas at Austin, Austin, TX, USA

    Deji Akinwande

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  1. Sebastian Pazos
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Contributions

M.L., P.d.P. and S.P. designed the project. Y.S., O.A., Y.P., W.Z. and Y.Y. fabricated the samples and performed focused-ion-beam and cross-section TEM. S.P. designed and programmed the scripts for instrumentation control and data post-processing and measured the d.c. electrical characteristics of the devices. H.Z. and S.P. measured the high-frequency characteristics assisted by J.V., L.A. and E.G. A.F and D.P. aided with the simulations of the proof-of-concept application. A.S., D.P., D.A. and M.L. provided access to the required facilities. S.P. and M.L. wrote the article. All the authors discussed the results and revised the manuscript.

Corresponding author

Correspondence to Mario Lanza.

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Nature Electronics thanks Joanna Symonowicz, Lin-Sheng Wu and the other, anonymous, reviewer(s) for their contribution to the peer review of this work.

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Supplementary Information

Supplementary Figs. 1–22 and Notes 1–7 with details of the design, fabrication, measurement and modelling protocols.

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Pazos, S., Shen, Y., Zhang, H. et al. Memristive circuits based on multilayer hexagonal boron nitride for millimetre-wave radiofrequency applications. Nat Electron 7, 557–566 (2024). https://doi.org/10.1038/s41928-024-01192-2

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