Extended Data Fig. 10: In-plane field effect in another 6SL MnBi2Te4 device.
From: An antiferromagnetic diode effect in even-layered MnBi2Te4
a, Measured change of resistance \({R}_{xx}(\Delta {R}_{xx}={V}_{x}^{\;{\omega }_{1}}/{I}_{x}^{\;{\omega }_{1}})\) as a function of an electric field bias along \({V}_{y}^{{{\;{\rm{DC}}}}}\). b, Temperature dependence of ΔRxx.
