Extended Data Fig. 2: Design and statistics of weight device and sparsity device. | Nature Electronics

Extended Data Fig. 2: Design and statistics of weight device and sparsity device.

From: An index-free sparse neural network using two-dimensional semiconductor ferroelectric field-effect transistors

Extended Data Fig. 2

a-b, The 3D schematic of the structure of weight device (a) and sparsity device (b). c-f, Distribution and spatial heatmap of memory window (c, d) and Ion/Ioff ratio (e, f) for all 450 weight devices in the index-free IMC array. The red lines are fitted curves by the normal distribution. g, Statistics of 16-state characteristics from 100 weight devices. On each box, the central mark indicates the median of conductance of these 100 devices on a certain weight, and the bottom and top edges of the box indicate the 25th and 75th percentiles, respectively. The whiskers extend to the most extreme data points not considered outliers. h, Collected 8-state retention curves in 100 s from 50 weight devices (The shadow are dense lines of raw data rather than any error bands).

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