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A biologically inspired artificial neuron with intrinsic plasticity based on monolayer molybdenum disulfide

Abstract

Neuromorphic hardware that accurately simulates diverse neuronal behaviours could be of use in the development of edge intelligence. Hardware that incorporates synaptic plasticity—adaptive changes that strengthen or weaken synaptic connections—has been explored, but mimicking the full spectrum of learning and memory processes requires the interplay of multiple plasticity mechanisms including intrinsic plasticity. Here we show that an integrate-and-fire neuron can be created by combining a dynamic random-access memory and an inverter that are based on wafer-scale monolayer molybdenum disulfide films. In the system, the voltage in the dynamic random-access memory capacitor—that is, the neuronal membrane potential—can be modulated to emulate intrinsic plasticity. The module can also emulate the photopic and scotopic adaptation of the human visual system by dynamically adjusting its light sensitivity. We fabricate a 3 × 3 photoreceptor neuron array and demonstrate light coding and visual adaptation. We also use the neuron module to simulate a bioinspired neural network model for image recognition.

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Fig. 1: Versatile neuron module design.
Fig. 2: Synaptic activity and neuronal intrinsic plasticity of the neuron device.
Fig. 3: Light sensing and TTFS coding.
Fig. 4: Photopic and scotopic adaptation by adjusting VS.
Fig. 5: BioNN circuit for visual adaptation and feature recognition.

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Data availability

The source data file is available via figshare at https://figshare.com/s/a8fa70a5665cab68512d. Source data are provided with this paper.

Code availability

The codes used for simulation and data plotting are available from the corresponding authors upon reasonable request.

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Acknowledgements

We thank the support for device fabrication at the Guangzhou Innovation Centre of Optoelectronics and Microelectronics (GICOM). W.B. acknowledges support from the National Key Research and Development Program (grant no. 2021YFA1200500), Science and Technology Commission of Shanghai Municipality (no. 23JC1401100) and the Shanghai Pilot Program for Basic Research—Fudan University 21TQ1400100 (23TQ008). Y.C. thanks MOST National Key Technologies R&D Program (2022YFA1203804) and National Natural Science Foundation of China (62425405). W.B. and P.Z. also acknowledge support from the young scientist project of MOE innovation platform.

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Contributions

Y.W., Y.C., P.Z. and W.B. conceived and supervised the project. S.G. introduced the concept of intrinsic plasticity. S.G., X.D., X.G., L.T. and J.M. fabricated the device. Y.W. and X.D. performed the BioNN simulation. Y.W., S.G., X.C., X.W. and Q.S. performed the electrical measurement. All authors discussed the results and contributed to the manuscript preparation.

Corresponding authors

Correspondence to Peng Zhou, Yang Chai or Wenzhong Bao.

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Nature Electronics thanks the anonymous reviewers for their contribution to the peer review of this work.

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Supplementary Note 1, Figs. 1–32, and Tables 1 and 2.

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The evolution of the output spike during the learning process.

Supplementary Video 2 (download MP4 )

The evolution of VW during the learning process.

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Wang, Y., Gou, S., Dong, X. et al. A biologically inspired artificial neuron with intrinsic plasticity based on monolayer molybdenum disulfide. Nat Electron 8, 680–688 (2025). https://doi.org/10.1038/s41928-025-01433-y

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