Fig. 2: Dislocation cores and point-defects-free crystalline textures. | Nature Electronics

Fig. 2: Dislocation cores and point-defects-free crystalline textures.

From: Single-crystalline monolayer semiconductors with coherent quantum transport by vicinal van der Waals epitaxy

Fig. 2

a,b, Schematics (a) and HAADF-STEM images (b) of a local dislocation core near a Mo (5/7) point defect. The misfit angle (θd) represents the deviation between two adjoining grains, depicted as pink and green triangles. c, Acquisition of the collection of SAED patterns in the 16 growth patterns. d, Overlaid SAED patterns from epitaxial MoS2 single-crystal MLs grown at different TG values, with the magnified fifth-order (030) peaks shown in the insets. Schematics (top) illustrate the elimination of local deformation and point defects at different TG values. e, Angle deviations of the (030) peaks from the epitaxial single-crystal MoS2 MLs grown at different TG values, showing the cleanest crystallinity at TG = 850 °C.

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