Extended Data Fig. 1: Transfer characteristics of mechanically exfoliated NbxW1-xSe2 flakes of varied composition with different thicknesses. | Nature Electronics

Extended Data Fig. 1: Transfer characteristics of mechanically exfoliated NbxW1-xSe2 flakes of varied composition with different thicknesses.

From: Low-resistance contacts for p-type monolayer tungsten diselenide transistors using metallic layered Nb0.3W0.7Se2

Extended Data Fig. 1: Transfer characteristics of mechanically exfoliated NbxW1-xSe2 flakes of varied composition with different thicknesses.

a, Schematic of Nbx1W1-x1Se2 transistors, it had a near-zero Nb concentration, undetectable by EDX as described in the materials growth part of the Method section. b-e, Transfer characteristics of different Nbx1W1-x1Se2 flake thickness. f, Schematic of Nb0.03W0.97Se2 transistors. g-j, Transfer characteristics of different Nb0.03W0.97Se2 flake thickness. k, Schematic of Nb0.3W0.7Se2 transistors. l-o, Transfer characteristics of different Nb0.3W0.7Se2 flake thickness.

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