Extended Data Fig. 2: Output characteristics of 2D/2D contacted ML FETs on 90 nm SiO2 substrates. | Nature Electronics

Extended Data Fig. 2: Output characteristics of 2D/2D contacted ML FETs on 90 nm SiO2 substrates.

From: Low-resistance contacts for p-type monolayer tungsten diselenide transistors using metallic layered Nb0.3W0.7Se2

Extended Data Fig. 2: Output characteristics of 2D/2D contacted ML FETs on 90 nm SiO2 substrates.

a-d, four different 2D/2D contacted devices with a channel length of 200 nm. e, a 2D/2D contacted device with a channel length of 400 nm. f and g, two 2D/2D contacted devices with a channel length of 1 um. h, a 2D/2D contacted device with a channel length of 2 um.

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