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Epitaxially grown single-crystalline antimony trioxide dielectrics for two-dimensional electronics

Nature Electronics volume 9, pages 367–378 (2026) Cite this article

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Abstract

Two-dimensional semiconductors require atomically thin high-dielectric-constant dielectrics to create scaled electronic devices. Several candidate materials possess features such as scalability, low interface trap density and good dielectric properties, but many of these require transfer, which can create defects, whereas traditional dielectrics are difficult to grow on the inert surface of two-dimensional materials. Here we report the van der Waals epitaxial growth of single-crystalline antimony trioxide (Sb2O3) on the two-dimensional semiconductors tungsten diselenide (WSe2) and molybendum disulfide (MoS2). Using a two-step process to decouple nucleation and epitaxy, unidirectional Sb2O3 domains are nucleated, grown and stitched to form single-crystal films with high uniformity within a growth time of less than 2 min. Monolayer Sb2O3 has a dielectric constant of 6, a breakdown field of ~11 MV cm−1 and a low interface trap density of 3.8 × 1010 cm−2 eV−1. Top-gate field-effect transistors using a monolayer Sb2O3/bilayer WSe2 heterostructure (equivalent oxide thickness, 0.4 nm) exhibit subthreshold swings of 62 mV dec−1, on/off ratios of 106 and low gate leakage currents of 10−4 A cm−2. We illustrate the scalability of the approach by creating 60 top-gate WSe2 transistor arrays with 95% yield, and complementary logic inverters with a maximum voltage gain of 13 at Vdd = 1 V.

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Fig. 1: vdW epitaxial growth of atomically thin single-crystal Sb2O3 film.
The alternative text for this image may have been generated using AI.
Fig. 2: Characterizations and growth mechanism of single-crystal Sb2O3.
The alternative text for this image may have been generated using AI.
Fig. 3: Dielectric properties of Sb2O3 single crystals.
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Fig. 4: Electrical characterizations of a 6-nm-thick Sb2O3 for WSe2 top-gate FETs.
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Fig. 5: Top-gated WSe2 FETs with sub-0.5-nm EOT.
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Fig. 6: Low-power FETs and logic gates based on Sb2O3/WSe2 heterostructures.
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Data availability

Source data are provided with this paper. The other data that support the findings of this study are available via Zenodo at https://doi.org/10.5281/zenodo.15245078 (ref. 82). The data that support the plots within this paper and other findings of this study are available from the corresponding authors upon reasonable request.

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Acknowledgements

This work was supported by the National Key R&D Program of the Ministry of Science and Technology of China (grant number 2022YFA1203801 to X.D.); National Natural Science Foundation of China (grant numbers 52221001, 52372145, 22422104 and 62404079 to X.D., J.L. and R.W.); the Open Research Fund of Suzhou Laboratory (number SZLAB-1508-2024-TS013 to X.D.); the Natural Science Foundation of Hunan Province (grant number 2023JJ20009, 2025JJ40050 and 2024JJ6135 to J.L. and R.W.); the Hunan Province ‘Huxiang Talents’ Project (grant number 2023RC3092 to J.L.); and the Natural Science Foundation of Chongqing, China (grant number cstc2021jcyj-msxmX0321 to J.L.). The STEM characterization was performed at the Analytical Instrumentation Center of Hunan University. The funders had no role in the study design, data collection and analysis, decision to publish or preparation of the manuscript.

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  1. These authors contributed equally: Zimei Zhang, Zhengwei Zhang.

Authors and Affiliations

  1. Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory of Chemo and Biosensing, College of Chemistry and Chemical Engineering Hunan University, Changsha, China

    Zimei Zhang, Muhammad Zeeshan Saeed, Zucheng Zhang, Weiqi Dang, Shanhao Li, Ping Lu, Jingmei Tang, Xin Li, Liang Chen, Wengjing Xie, Minghui Jin, Feng Ding, Yang Chen, Dongyan Liu, Jia Li & Xidong Duan

  2. National Key Laboratory of Power Semiconductor and Integration Technology, Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education, College of Semiconductors (College of Integrated Circuits) Hunan University, Changsha, China

    Zhengwei Zhang & Bo Li

  3. College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, China

    Miaomiao Li & Mengjian Zhu

  4. Shiyan Key Laboratory of Quantum Information and Precision Optics, School of Optoelectronic Engineering, School of New Energy, Hubei University of Automotive Technology, Shiyan, China

    Dingyi Shen

  5. Center of Quantum Materials and Devices and Institute of Advanced Interdisciplinary Studies, Chongqing University, Chongqing, China

    Biao Qin

  6. School of Physics and Electronics, Hunan University, Changsha, China

    Ruixia Wu

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  1. Zimei Zhang
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Contributions

R.W., J.L. and X.D. designed the research and supervised the project. Zimei Zhang synthesized the vdW heterostructures and performed the device fabrication, electrical measurements and analysis. Zhengwei Zhang, M.Z.S., M.L., D.S., Zucheng Zhang and M.Z. performed the C-AFM, AFM and TEM characterizations and contributed to the discussions. Zhengwei Zhang, S.L., P.L., X.L., F.D., Y.C., W.X., M.J. and D.L. conducted the growth experiments of TMDs. J.T., L.C., W.D. and R.W. performed the electrical measurements. Zimei Zhang, Zhengwei Zhang and B.Q. conducted the theoretical calculations and wrote the related discussions. Zimei Zhang, R.W., J.L. and X.D. co-wrote the manuscript with inputs from all authors. B.L. revised the manuscript. All authors discussed the results and commented on the manuscript.

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Correspondence to Ruixia Wu, Jia Li or Xidong Duan.

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Supplementary Figs. 1–37, Table 1 and Note 1.

Supplementary video 1 (download MP4 )

Thermal relaxation process of single-crystal Sb2O3 on WSe2 at 0° orientation. The simulation results demonstrate that domains with initial angles of 0° undergo in-plane sliding and rotation before eventually returning to the 0° configuration, which represents the most energetically stable state.

Supplementary video 2 (download MP4 )

Thermal relaxation process of single-crystal Sb2O3 on WSe2 at 60° orientation. The simulation results demonstrate that domains with initial angles of 60° undergo in-plane sliding and rotation before eventually returning to the 0° configuration, which represents the most energetically stable state.

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Zhang, Z., Zhang, Z., Saeed, M.Z. et al. Epitaxially grown single-crystalline antimony trioxide dielectrics for two-dimensional electronics. Nat Electron 9, 367–378 (2026). https://doi.org/10.1038/s41928-026-01580-w

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