Fig. 3: Liner properties of the WS2 film.
a, Schematic of the device used for resistivity measurements of Cu using WS2 as a liner. b, Optical micrographs of the liner assessment devices. The electrical connection for the four-terminal measurement is annotated. c, Resistivity of Cu films as a function of film thickness with a WS2 liner and without a liner (reference). The centres of the circles represent the average resistivity values, based on 13–16 independent devices for each Cu thickness. The error bars show the standard deviation. d, Cumulative distribution of resistivity values for an ~10-nm Cu film with a single-layer WS2 liner and without a liner (reference). e, SEM and AFM images (inset) of 10-nm-thick Cu films without a liner (reference, top) and with single-layer WS2 liner (bottom). The root-mean-square roughness, Rrms, is indicated on the respective panels.
