Fig. 4: Electronic properties of 4.
From: On-surface synthesis of nitrogen-doped nanographene with an [18]annulene pore on Ag(111)
a dI/dV curves recorded above the individual 4 (red and blue lines) and the bare Ag(111) substrate (gray). The inset shows a close-up view of 4. b 2D map composed of 51 sequential dI/dV curves taken along the I-II line indicated in the inset of a. Constant current dI/dV maps taken at different bias voltages: (c) 500 mV, (d) 750 mV, (e) 1.3 V, (f) 1.9 V, respectively. g–j DFT calculated spatial distribution of four unoccupied electronic states on chemical structures of 4. Measurement parameters: V = 10 mV and I = 10 pA in the inset of a. V = 2.4 V, I = 300 pA, Vac = 10 mV for STS in a. V = 500 mV, I = 110 pA, Vac = 10 mV in c. V = 1.1 V, I = 110 pA, Vac = 10 mV in d. V = 1.3 V, I = 120 pA, Vac = 10 mV in e. V = 1.9 V, I = 150 pA, Vac = 10 mV in f.
