Fig. 1: Si optical avalanche-induced trapping memory (ATM) device and its characteristics.
From: All-silicon non-volatile optical memory based on photon avalanche-induced trapping
a Schematic diagram of the Si ATM based on microring structure (inset: microscope image of the device), and the program and erase process within the memory waveguide. b Configuration of the Si-SiO2 interface and associated traps, with Si atoms shown in orange, oxygen atoms in blue, and traps in purple. c Measured resonant wavelength switches of the Si optical ATM at 25 °C (green), 50 °C (orange), and 75 °C (purple). d Measured optical spectrum of the Si ATM in the erase (green) and program (purple) states at 75 °C. e Measured dark current of the Si ATM at 25 °C (green), 50 °C (orange), and 75 °C (purple), along with expanded current curves in the avalanche region (program region) and the forward region (erase region).
