Fig. 2: Performance of the Si avalanche-induced trapping memory (ATM).
From: All-silicon non-volatile optical memory based on photon avalanche-induced trapping
a Measured optical spectrum of the Si ATM during programming, recorded every 60 s, progressing from left to right over time. b Multiple optical power states versus program time of the Si ATM at the wavelength of  ~ 1313.52 nm, as indicated by the black dash line in Fig. a. The error bars for different states were measured based on five trials. c Corresponding resonant wavelengths versus program time. d Corresponding quality factors (Q) of the microring Si optical memory from Lorentzian shape fitting. e Retention measurements of non-volatile resonant wavelengths of the program (purple) and erase (green) states within a 24-hour period. f Endurance measurements of the Si optical ATM with 100 cycles of program and erase.
